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Current Cool Picture
 
3D dislocation structure
Intoduction
A technique, using a symmetric reflection via azimuthal rotation of a sample, is presented for characterization of the three-dimensional distribution of dislocations in single crystals. An analytic formula is derived to transform the three-dimensional geometry of a straight dislocation into its two-ensional projection onto the detector plane. By fitting topographs to the formula, the orientations and locations of dislocations are quantitatively determined. The dislocations in a thermally stressed Si wafer are examined as an example.
Some pictures of our experiments

A series of x-ray diffraction images showing a key principle of characterizing 3-D distribution of dislocation, developed by our group.
A series of X-ray topographs, obtained from the Si 004 reflection via the azimuthal rotation of the sample. Three representative dislocations, A–C, are indicated in each topograph. The rotation angles are marked.
 
 
Pohang University of Science & Techology San 31, Hyojadong, Pohang 790-784, Republic of Korea   
 
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