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Current Cool Picture
 
Misfit dislocations in a p/p+ Si homoepitaxy
Intoduction
Using a scintillator-CCD imaging system, we successfully conducted a synchrotron white beam X-ray Diffraction Topography experiment. Optimum condition for high-resolution imaging is obtainable from the incident angle dependence of geometrical resolution.
Some pictures of our experiments

X-ray Diffraction Topograph of arrays of misfit dislocations in a p/p+ Si homoepitaxy
The structure of dislocation slip bands in p/p+ Si was also examined by X-ray Diffraction Topography. The high-resolution white beam microtopograph clearly shows individual 60 degree misfit dislocations and its pile-ups running along mutually orthogonal <110> directions. The microtopograph also reveals the detailed microstructure of the slip bands, such as the (110) aligned dislocation pile-ups, dislocations blocked by the band boundaries, etc., which have never been observed by conventional X-ray topography.
 
 
Pohang University of Science & Techology San 31, Hyojadong, Pohang 790-784, Republic of Korea   
 
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